MUN2132T1G

Overview

The MUN2132T1G is a single PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SC-59 package. It integrates a monolithic bias network consisting of a series base resistor (R1) and a base-emitter resistor (R2), both typically 4.7 kΩ with a ratio of 1.0. The device supports a continuous collector current of 100 mA and withstands a collector-emitter voltage of 50 V. Electrical characteristics include a minimum DC current gain (hFE) of 15 at 5 mA and 10 V, and a maximum collector-emitter saturation voltage of 0.25 V at 10 mA. Total power dissipation reaches 338 mW at 25°C, operating within a junction temperature range of -55°C to +150°C.

Feature Summary

• Integrates a single transistor with a monolithic bias network comprising two resistors to replace discrete components.
• Designed to simplify circuit design by reducing board space and component count.
• Manufactured using lead-free, halogen-free/BFR-free processes compliant with RoHS standards.

Applications

• Replacing discrete transistor and resistor networks in digital logic circuits.
• Interface driving applications requiring simplified biasing for PNP transistors.
• Automotive electronics utilizing AEC-Q101 qualified variants with unique site requirements.

Procurement Notes

Verify the specific ordering suffix and prefix against official documentation to confirm package type and qualification status. Confirm that the 'G' suffix indicates a Pb-Free package as specified in the manufacturer's ordering information. Ensure compatibility with required automotive PPAP capabilities if applicable, noting that S and NSV prefixes denote specific site qualifications.

Selection Notes

Select this component when a compact PNP solution with integrated biasing is required for digital switching or interface tasks. Compare thermal dissipation ratings between SC-59 and alternative packages like SOT-23 based on available board space and heat sinking constraints. Verify input voltage limits and saturation characteristics against the specific load conditions of the target application circuit.

Part Context

This part belongs to the MUN2132 series of digital transistors designed to substitute individual devices and external resistor bias networks. The series includes variants such as MMUN2132L in SOT-23 and MUN5132 in SC-70/SOT-323, all sharing similar electrical functions but differing in physical packaging and thermal characteristics.

Replacement Considerations

MMUN2132LT1G

FAQ

What are the internal resistor values for the MUN2132T1G?

The device contains a series base resistor (R1) and a base-emitter resistor (R2), both typically valued at 4.7 kΩ, resulting in a resistor ratio of 1.0.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 50 Vdc.

Does the MUN2132T1G support automotive applications?

Standard versions are not explicitly designated for automotive use; however, variants with the S or NSV prefix are AEC-Q101 qualified and PPAP capable for such applications.