MUN2135T1G

MUN2135T1G

$0.03
  • Description:TRANS PREBIAS PNP 50V 0.1A SC59
  • Series:-

SKU:fb18fbf0852a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A SC59
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:230 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59

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MUN2135T1G

Overview

The MUN2135T1G is a PNP Bias Resistor Transistor (BRT) manufactured by onsemi, designed to replace discrete transistors and external biasing networks. It integrates a single PNP transistor with a monolithic resistor network consisting of a series base resistor and a base-emitter resistor within an SC-59 (SOT-23) package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 230 mW at 25°C ambient temperature. The device features a typical input resistance (R1) of 47 kΩ and a typical resistor ratio (R1/R2) of 1. It operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates a PNP transistor with a monolithic bias resistor network to eliminate external components
  • Reduces printed circuit board space and simplifies circuit design
  • Provides high DC current gain for reliable switching performance

Applications

  • General-purpose switching applications in consumer electronics
  • Driver circuits for relays, solenoids, and LEDs
  • Logic level translation and interface circuits between microcontrollers and peripheral devices

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance and halogen-free requirements for your target application environment. Cross-reference the datasheet revision date to ensure alignment with current manufacturing standards and pinout configurations before finalizing procurement orders.

Selection Notes

Select this component when a compact PNP switching solution with integrated biasing is required. Ensure the 50 V voltage rating and 100 mA current capacity exceed the maximum circuit loads. Verify that the 47 kΩ internal base resistance matches the driving source impedance and logic levels. Consider the thermal constraints of the SC-59 package if operating near the upper temperature limits.

Part Context

This part belongs to the MUN21xx series of digital transistors from onsemi, which are engineered to simplify analog and digital circuit designs. The series replaces multiple discrete components with a single surface-mount device, offering consistency in biasing characteristics. It is widely used in portable devices and industrial control systems where space efficiency and assembly cost reduction are critical priorities.

Replacement Considerations

Compatible substitutes include the MMUN2135LT1G and NSVMMUN2135LT1G variants, which share identical electrical characteristics but may differ in automotive qualification status or specific reel packaging details. Verify pin compatibility and thermal performance before substitution.

MUN2135T1GMUN2135T1G
$0.03
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