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The MUN2136T1G is a PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SC-59 surface-mount package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). Both resistors are typically 100 kOhms. The device supports a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. Total power dissipation is rated at 230 mW at 25°C ambient temperature, derating to 1.8 mW/°C above this threshold. The operating junction and storage temperature range spans from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm shipping configuration and compliance status. Confirm that the requested part number matches the exact electrical characteristics required for the application. Check for any recent product change notices or lifecycle status updates directly from the manufacturer before finalizing procurement plans.
Select this component when a PNP digital transistor with high input impedance is required. The 100 kOhm internal resistors make it suitable for low-current driving applications where minimal base current draw is necessary. Ensure the SC-59 package footprint aligns with the existing board layout constraints and thermal management requirements.
This component belongs to the MUN21xxT1 series of PNP Bias Resistor Transistors manufactured by onsemi. The series is designed to simplify digital switching circuits by combining a transistor and bias resistors into a single surface-mount device. The 'G' suffix typically indicates lead-free and RoHS compliance, distinguishing it from older non-compliant variants within the same functional family.
Direct substitutes include other PNP BRTs with similar 100 kOhm resistor ratios and 50V ratings, such as the DTA144EE or MUN5236. Verify pinout compatibility and thermal resistance values when replacing discrete components or alternative BRTs.