MUN2136T1G

Overview

The MUN2136T1G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. It replaces discrete devices and external networks to reduce board space and component count. The device operates with a collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. Electrical characteristics include a typical DC current gain of 150 at IC = 5.0 mA, an input resistor R1 of 100 kOhms, and a resistor ratio of 1.0. It is housed in the SC-59 package.

Feature Summary

• Integrates a single PNP transistor with a monolithic bias network containing series base and base-emitter resistors.
• Designed to replace individual transistors and external resistor bias networks, reducing system cost and board space.
• Available with S and NSV prefixes for automotive applications requiring AEC-Q101 qualification and PPAP capability.

Applications

• Automotive circuits requiring unique site and control change requirements
• General-purpose digital switching applications
• Logic level translation interfaces

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package type and shipping configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before placing orders. Ensure the selected variant matches the required thermal and electrical specifications for the target application environment.

Selection Notes

Select the MUN2136T1G when a PNP digital transistor with high input impedance is required. The integrated 100 kOhm resistors simplify circuit design by eliminating external components. Consider the SC-59 package dimensions and thermal dissipation limits relative to the ambient temperature and power constraints of the specific PCB layout.

Part Context

The MUN2136T1G belongs to the DTA115E/D series of digital transistors manufactured by onsemi. This family includes variants such as MMUN2136LT1G, MUN5136T1G, DTA115EET1G, and DTA115EM3T5G, which share similar electrical characteristics but differ in packaging options like SOT-23, SC-70/SOT-323, SC-75, and SOT-723.

Replacement Considerations

Direct substitutes within the same family include MMUN2136LT1G (SOT-23), MUN5136T1G (SC-70/SOT-323), DTA115EET1G (SC-75), and DTA115EM3T5G (SOT-723). Verify pinout compatibility and package dimensions before substitution.

FAQ

What are the values of the internal resistors in the MUN2136T1G?

The internal bias network consists of a series base resistor (R1) and a base-emitter resistor (R2), both typically valued at 100 kOhms, resulting in a resistor ratio of 1.0.

Is the MUN2136T1G qualified for automotive applications?

Yes, versions with the S and NSV prefixes are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications requiring unique site and control change requirements.

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) is rated at 50 Vdc.