MUN2211JT1

MUN2211JT1

$0.03
  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-

SKU:952eab9db040 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:230 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59

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MUN2211JT1

Overview

The MUN2211JT1G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a silicon transistor with a monolithic bias network comprising a series base resistor and a base-emitter resistor within an SC-59 (SOT-23) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 230 mW. The device features a typical input resistance of 10 kOhms with a resistor ratio of 1. Minimum DC current gain (hFE) values are specified as 35 and 60 under defined conditions. The operational temperature range extends from -55°C to +150°C.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias network consisting of two resistors to replace discrete components.
  • Designed for low-power surface mount applications to simplify circuit design and reduce board space requirements.
  • Eliminates the need for external biasing resistors, thereby reducing overall component count in digital switching circuits.

Applications

  • Digital switching circuits requiring simplified bias networks
  • Low-power surface mount applications where board space is limited
  • General-purpose transistor replacement for discrete resistor biasing

Procurement Notes

Verify the specific suffix 'JT1' against official onsemi documentation, as standard listings frequently utilize the 'T1G' suffix. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the ordering part number matches the exact tape and reel packaging configuration required for your assembly process.

Selection Notes

Select this component when a single NPN BRT with 50V rating and 100mA current capacity is required. The integrated 10kOhm input resistance simplifies drive interface design. Verify that the SC-59 package dimensions fit the PCB footprint constraints. Consider thermal management capabilities given the 230mW power dissipation limit in enclosed environments.

Part Context

This component belongs to the MUN2211 series of Bias Resistor Transistors produced by onsemi. These devices are engineered to consolidate discrete transistor and resistor functions into a single semiconductor package. The series is widely utilized in consumer electronics and industrial control systems to minimize assembly complexity and improve reliability through reduced component count.

Replacement Considerations

Publicly confirmed substitute part numbers for the MUN2211JT1G are not available in the provided source material. Cross-reference with other manufacturers' BRTs having identical pinouts, voltage ratings, and resistance ratios only after verifying datasheet compatibility.

MUN2211JT1MUN2211JT1
$0.03
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