MUN2211JT1G

$0.03

Description：TRANS PREBIAS NPN 50V 0.1A SC59
Series：-

SKU:c5b377b4b13b Category: Single, Pre-Biased Bipolar Transistors Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 50V 0.1A SC59
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
Resistors Included：R1 and R2
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：10 kOhms
Resistor - Emitter Base (R2)：10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：-
Power - Max：230 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SC-59

Download product information

MUN2211JT1G

Overview

The MUN2211JT1G is a single NPN digital transistor (BRT) from onsemi, housed in a SC-59 (SOT-23-3) surface-mount package. It integrates an NPN transistor with built-in bias resistors, featuring a typical base resistor of 10 kOhms and an emitter-base resistor ratio of 1. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 230 mW. The device operates within a temperature range of -55°C to +150°C and offers a minimum DC current gain (hFE) of 35 at 5 mA and 10 V.

Feature Summary

Integrates NPN transistor with internal bias resistors for simplified circuit design
Provides high current gain with low saturation voltage characteristics
Designed for surface-mount assembly in compact electronic applications

Applications

General-purpose switching circuits
Driver stages for logic interfaces
Low-power signal processing applications

Procurement Notes

Verify the specific suffix JT1G corresponds to the SC-59/TO-236-3 package configuration when sourcing. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure storage conditions align with moisture sensitivity levels defined in the datasheet to maintain component reliability during soldering processes.

Selection Notes

Select this component for designs requiring a pre-biased NPN solution in space-constrained environments. The SC-59 package offers a balance between thermal performance and footprint size. Consider the 50V voltage rating and 100mA current limit to ensure adequate headroom for the intended load. Verify that the integrated resistor values meet the specific drive requirements of the controlling logic source.

Part Context

This part belongs to the MUN2211 series of digital transistors manufactured by onsemi. It is categorized under small-signal bipolar junction transistors (BJTs) designed for discrete replacement or integrated functionality. The product line focuses on providing complete biasing networks within a single semiconductor package to reduce board space and assembly complexity.