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The MUN2211T1 is an NPN Silicon Bias Resistor Transistor (BRT) from onsemi, housed in the SC-59 surface-mount package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). The device features a collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. Typical internal resistance values are 10 kOhms for both R1 and R2. Total device power dissipation is rated at 230 mW at 25°C on a minimum FR-4 pad, with a junction-to-ambient thermal resistance of 540 °C/W under these conditions.
Verify the specific ordering suffix against the manufacturer's documentation to confirm shipping quantities and lead times. Confirm RoHS compliance status if required by the target assembly process. Ensure the SC-59 footprint matches the design layout before finalizing procurement orders.
Select this component when circuit design requires simplification through reduced board space and component count. The integrated bias network eliminates external resistors, streamlining the schematic. Verify that the 10 kOhm typical input resistance aligns with the driving logic requirements and desired switching thresholds.
This part belongs to the MUN2211T1 Series of preferred devices designed to replace individual transistors and their external bias networks. The series includes variants with different resistor ratios and values, all sharing the same NPN silicon structure and SC-59 packaging format for consistent manufacturing integration.
MUN2211T1G serves as the lead-free equivalent within the same series.