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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC59
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：230 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SC-59
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Overview
The MUN2211T1G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor into a single SC-59-3 package. The device supports a collector continuous current of 100 mA and a collector-emitter voltage of 50 V. Typical input resistance is 10 kOhms with a resistor ratio of 1. DC current gain (hFE) ranges from 35 to 60. Power dissipation is rated at 230 mW, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network comprising two resistors to replace discrete components.
- Designed to simplify circuit design while reducing board space and component count in surface mount applications.
Applications
- General-purpose switching circuits
- Low power surface mount applications
- Driver circuits for logic interfaces
Procurement Notes
Verify the specific ordering suffix T1G to confirm the reel packaging format and compliance status. Confirm RoHS and halogen-free attributes against the latest manufacturer datasheet before integration. Ensure the SC-59-3 footprint matches the target PCB layout requirements for proper surface mount assembly.
Selection Notes
Select this component when a compact NPN solution with integrated biasing is required for low-current switching tasks. Compare the 10 kOhm typical input resistance against other BRT variants if specific base drive characteristics are needed. Verify that the 50 V collector-emitter rating meets the maximum voltage stress conditions of the application environment.
Part Context
This part belongs to the MUN2211 series of digital transistors produced by onsemi. It is functionally related to other BRT devices such as the MMUN2211LT1G, which utilizes an SOT-23-3 package instead of the SC-59-3 form factor. Both share similar electrical characteristics but differ in physical dimensions and thermal properties.
Replacement Considerations
The MMUN2211LT1G serves as a direct functional substitute with identical electrical specifications, differing only in the SOT-23-3 package versus the SC-59-3 package used by the MUN2211T1G.
