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The MUN2211T3G is a single NPN Digital Transistor (BRT) manufactured by onsemi, housed in an SC-59-3 surface-mount package. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 230 mW. The device features a typical input resistance of 10 kOhms with a resistor ratio of 1, and a minimum DC current gain (hFE) of 35. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix and manufacturer lot codes against official onsemi documentation to ensure component authenticity. Confirm that the received parts match the MUN2211T3G designation and comply with RoHS standards. Check for any unique site requirements associated with prefix variations if automotive qualification is required.
Select this component when a single NPN BRT with a 10 kOhm input resistor and unity resistor ratio is needed. Ensure the 50 V VCEO and 100 mA IC ratings meet the circuit's voltage and current demands. Consider the SC-59-3 package dimensions for PCB layout constraints and verify thermal management requirements for the 230 mW power dissipation limit.
This part belongs to the MUN2211 series of Digital Transistors from onsemi. It is functionally related to other BRTs in the family but distinguished by its specific resistor values and NPN configuration. The SC-59-3 package is standard for small-signal surface-mount applications.
Publicly confirmed substitute part numbers are not available in the provided data. Verify compatibility with alternative BRTs based on matching VCEO, IC, hFE, and internal resistor ratios before substitution.