MUN2212T1

MUN2212T1

$0.05
  • Description:TRANS BRT NPN 100MA 50V SC59
  • Series:-

SKU:a3dac26fe4b2 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS BRT NPN 100MA 50V SC59
  • Series:-
  • Mfr:onsemi
  • Package:Cut Tape (CT),Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:338 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59

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MUN2212T1

Overview

The MUN2212T1 is an NPN Bias Resistor Transistor (BRT) from the onsemi MUN2211T1 Series, housed in a surface-mount SC-59 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor (R1) and a base-emitter resistor (R2). Both resistors are nominally 22 kOhms, yielding a typical ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. DC current gain (hFE) has a minimum value of 60 at 5 mA and 10 V. Total power dissipation reaches 338 mW on a 1.0 x 1.0 inch FR-4 pad, with an operating temperature range of -55°C to +150°C.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias network containing two resistors to replace discrete components.
  • Features modified gull-wing leads designed to absorb thermal stress during soldering, eliminating die damage risk.
  • Available in Pb-Free packages compliant with RoHS standards.

Applications

  • Level shifting between 12 or 24 Volt circuits and logic levels
  • Open collector inverter configurations for signal inversion
  • Unregulated current source implementations

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance status. Confirm that the requested part number matches the exact resistor values and polarity required for the circuit design. Cross-reference the manufacturer's latest datasheet revision to ensure all electrical characteristics align with the intended application parameters before finalizing procurement orders.

Selection Notes

Select this component when a compact solution is needed to simplify circuit design by reducing board space and component count. Ensure the required input resistance matches the available 22 kOhm options within the series. Verify that the 50 V collector-emitter voltage rating and 100 mA current capacity meet the system requirements. Consider the SC-59 package dimensions for PCB layout constraints.

Part Context

This device belongs to the MUN2211T1 Series of NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Networks. The series includes various models differentiated by their internal resistor values, such as the MUN2211T1 (10 kOhm/10 kOhm) and MUN2213T1 (47 kOhm/47 kOhm). All devices in this family share the same SC-59 package and general electrical characteristics, differing primarily in their bias network configurations.

Replacement Considerations

MUN2212T1G is the lead-free version of this component.

FAQ

What is the pin configuration for the SC-59 package?

Pin 1 is the Emitter (Ground), Pin 2 is the Base (Input), and Pin 3 is the Collector (Output).

What are the nominal values for the internal resistors R1 and R2?

For the MUN2212T1, both the series base resistor (R1) and the base-emitter resistor (R2) have nominal values of 22 kOhms.

How does the BRT design benefit the circuit?

The BRT eliminates individual external bias resistors by integrating them into a single device, which reduces system cost and board space while simplifying circuit design.

MUN2212T1MUN2212T1
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