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The MUN2212T1G is a single NPN Digital Transistor (BRT) manufactured by onsemi, designed to replace discrete transistor and resistor networks. It integrates a monolithic bias network consisting of a 22 kOhm series base resistor and a 22 kOhm base-emitter resistor within an SC-59-3 package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a minimum DC current gain (hFE) of 60. The device supports surface mount installation with a power dissipation rating of 338 mW and operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and automotive qualification status. Ensure the selected variant matches the required RoHS compliance and halogen-free specifications for the target application environment. Cross-reference datasheet revision dates to confirm parameter consistency before finalizing procurement orders.
Select this component when a single NPN switch with integrated biasing is required to minimize board area. The 22 kOhm input resistance configuration suits standard logic interface levels. Verify that the 50 V collector-emitter voltage and 100 mA current ratings exceed the maximum operational loads of the intended circuit to ensure reliable performance under all conditions.
This part belongs to the MUN2212 series of Bipolar Transistors with Monolithic Bias Resistor Networks. These devices are engineered to simplify circuit design by replacing individual transistors and their associated external bias resistors. The series is widely used in applications where space constraints and assembly efficiency are critical design factors.
SMUN2212T1G: Surface mount variant with identical electrical characteristics but potentially different packaging or reel specifications.