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The onsemi MUN2213JT1 is a single NPN pre-biased bipolar transistor designed for surface-mount applications. It integrates an internal base resistor network to simplify circuit design and reduce component count. The device features a collector-emitter voltage (Vceo) of 50 V and a continuous collector current rating of 100 mA. It is housed in the SC-59 package, which provides a compact footprint suitable for space-constrained designs. The unit operates within a temperature range of -55°C to +150°C and has a power dissipation capability of 338 mW. This component belongs to the digital transistor family, offering reliable switching performance for logic interface tasks.
Verify the specific ordering suffix JT1 to ensure correct tape-and-reel packaging configuration compatible with automated assembly processes. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference the datasheet revision date to ensure alignment with current manufacturing specifications and pinout definitions for accurate PCB layout implementation.
Select this component when a compact NPN solution with integrated biasing is required for low-power switching tasks. The 50 V breakdown voltage suits general-purpose logic interfacing where higher voltage ratings are unnecessary. Consider the SC-59 package dimensions against available board real estate. Ensure the 100 mA current limit meets the load requirements without exceeding thermal dissipation constraints in the target enclosure.
This part belongs to onsemi's line of pre-biased transistors, which combine discrete transistors with internal resistors. These devices replace multiple discrete components, reducing solder joints and potential failure points. The MUN series is widely used in portable devices and industrial controls where reliability and small form factors are critical design drivers.
Public confirmed substitute part numbers: MMUN2213LT1G.