MUN2213JT1

MUN2213JT1

$0.05
  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-

SKU:1c6a91404af3 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:338 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59

Download product information

MUN2213JT1

Overview

The onsemi MUN2213JT1 is a single NPN pre-biased bipolar transistor designed for surface-mount applications. It integrates an internal base resistor network to simplify circuit design and reduce component count. The device features a collector-emitter voltage (Vceo) of 50 V and a continuous collector current rating of 100 mA. It is housed in the SC-59 package, which provides a compact footprint suitable for space-constrained designs. The unit operates within a temperature range of -55°C to +150°C and has a power dissipation capability of 338 mW. This component belongs to the digital transistor family, offering reliable switching performance for logic interface tasks.

Feature Summary

  • Integrates internal biasing resistors to minimize external component requirements
  • Provides high-density packaging for efficient board space utilization
  • Supports wide operating temperature ranges for robust environmental stability

Applications

  • Logic level shifting between different voltage domains
  • Switching applications in consumer electronics
  • Interface circuits for microcontroller input/output protection

Procurement Notes

Verify the specific ordering suffix JT1 to ensure correct tape-and-reel packaging configuration compatible with automated assembly processes. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference the datasheet revision date to ensure alignment with current manufacturing specifications and pinout definitions for accurate PCB layout implementation.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for low-power switching tasks. The 50 V breakdown voltage suits general-purpose logic interfacing where higher voltage ratings are unnecessary. Consider the SC-59 package dimensions against available board real estate. Ensure the 100 mA current limit meets the load requirements without exceeding thermal dissipation constraints in the target enclosure.

Part Context

This part belongs to onsemi's line of pre-biased transistors, which combine discrete transistors with internal resistors. These devices replace multiple discrete components, reducing solder joints and potential failure points. The MUN series is widely used in portable devices and industrial controls where reliability and small form factors are critical design drivers.

Replacement Considerations

Public confirmed substitute part numbers: MMUN2213LT1G.

MUN2213JT1MUN2213JT1
$0.05
Buy Now