MUN2213T1G

MUN2213T1G

$0.16
  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-

SKU:9b7e468b87a4 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:338 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59

Download product information

MUN2213T1G

Overview

The MUN2213T1G is a single NPN Bias Resistor Transistor (BRT) from onsemi, housed in an SC-59 (SOT-23) package. It integrates a transistor with a monolithic bias network consisting of a series base resistor (R1 = 47 kΩ) and a base-emitter resistor (R2 = 47 kΩ). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, continuous collector current (IC) of 100 mAdc, and DC current gain (hFE) ranging from 80 to 140 at IC = 5.0 mA. The device operates within a junction temperature range of -55°C to +150°C and features a total power dissipation of 230 mW at 25°C ambient.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias network containing two resistors to replace discrete components.
  • Designed to simplify circuit design by reducing board space and component count.
  • Manufactured using lead-free, halogen-free/BFR-free processes compliant with RoHS standards.

Applications

  • General-purpose switching applications requiring simplified bias networks.
  • Low-power surface mount applications where board space is limited.
  • Automotive and other applications requiring unique site and control change requirements (when ordered with S or NSV prefix).

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping quantity. The standard 'T1G' suffix indicates tape and reel packaging. Confirm that the required variant meets all necessary automotive qualification standards if applicable, as these require specific prefixes.

Selection Notes

Select this component when a single NPN BRT with a 47 kΩ/47 kΩ resistor ratio is needed. Ensure the application voltage does not exceed the 50 Vdc collector-emitter rating and the current remains within the 100 mA continuous limit. Verify thermal derating requirements for operating temperatures above 25°C.

Part Context

This part belongs to the DTC144E/D digital transistor family, which includes variants like MMUN2213L and MUN5213. These devices share the same internal circuit topology but differ in physical packaging options such as SOT-23, SC-70, and SC-75 to accommodate various surface-mount design constraints.

Replacement Considerations

Direct functional equivalents within the same datasheet include MMUN2213LT1G (SOT-23 package) and MUN5213T1G (SC-70/SOT-323 package). Cross-manufacturer replacements such as DTC144EE are electrically compatible but may have different pinout markings or mechanical dimensions.

FAQ

What is the typical value of the built-in bias resistors?

The typical value for both the series base resistor (R1) and the base-emitter resistor (R2) is 47 kΩ.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 50 Vdc.

Does the 'G' suffix indicate a specific electrical characteristic change?

No, the 'G' suffix indicates a Pb-Free package. It does not alter the electrical function or specifications of the device.

MUN2213T1GMUN2213T1G
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