MUN2214T1

MUN2214T1

$0.03
  • Description:TRANS BRT NPN 100MA 50V SC59
  • Series:-

SKU:04cc7b0260c6 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS BRT NPN 100MA 50V SC59
  • Series:-
  • Mfr:onsemi
  • Package:Cut Tape (CT),Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:338 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59

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MUN2214T1

Overview

The MUN2214T1 is an NPN Silicon Bias Resistor Transistor (BRT) from onsemi, housed in a surface-mount SC-59 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor (R1 = 10 kΩ) and a base-emitter resistor (R2 = 47 kΩ). The device supports a maximum collector current of 100 mA and withstands collector-emitter voltages up to 50 Vdc. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at IC = 5.0 mA and VCE = 10 V, and a maximum collector-emitter saturation voltage of 0.25 Vdc at IC = 10 mA. Thermal dissipation is rated at 230 mW at 25°C ambient temperature.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias network containing two resistors to replace discrete components.
  • Designed for low power surface mount applications using the SC-59 package.
  • Capable of wave or reflow soldering with modified gull-winged leads that absorb thermal stress.

Applications

  • Level shifting between 12V/24V circuits and logic levels
  • Open collector inverter configurations
  • Unregulated current source implementations

Procurement Notes

Verify the specific ordering suffix when purchasing. The 'T1' suffix indicates standard tape and reel packaging with 3000 units per reel. Confirm whether the 'G' suffix is required for lead-free compliant packages, as this affects the physical marking and environmental compliance status of the component.

Selection Notes

Select the MUN2214T1 when a fixed ratio of base-to-base-emitter resistance is required for NPN switching applications. The 10 kΩ input resistor value suits moderate drive currents, while the 47 kΩ emitter resistor provides defined off-state leakage characteristics. Ensure the 50 V breakdown voltage meets the circuit's maximum operating requirements.

Part Context

This component belongs to the MUN2211T1 Series of preferred devices from onsemi. The series offers various combinations of internal resistors to accommodate different logic families and drive requirements without altering the external circuit topology. All members share the same SC-59 footprint and pinout configuration.

Replacement Considerations

MUN2214T1G

FAQ

What are the values of the integrated resistors in the MUN2214T1?

The MUN2214T1 contains a series base resistor (R1) of 10 kΩ and a base-emitter resistor (R2) of 47 kΩ.

How does the SC-59 package handle thermal stress during soldering?

The SC-59 package features modified gull-winged leads designed to absorb thermal stress during wave or reflow soldering processes, eliminating the possibility of damage to the die.

What is the minimum DC current gain specified for this device?

The minimum DC current gain (hFE) is specified as 80, measured at a collector current of 5.0 mA and a collector-emitter voltage of 10 V.

MUN2214T1MUN2214T1
$0.03
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