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The MUN2214T1G is a single NPN digital transistor manufactured by onsemi, housed in an SC-59 (SOT-23) surface-mount package. It integrates a monolithic bias network consisting of a 10 kOhm series base resistor and a 47 kOhm base-emitter resistor, yielding a typical resistance ratio of 0.21. The device supports a collector-emitter voltage of 50 V and continuous collector current of 100 mA, with power dissipation rated at 338 mW. It features a minimum DC current gain (hFE) of 80 and operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's latest datasheet to confirm packaging options such as cut tape, reel, or MouseReel. Confirm RoHS compliance status and lead times directly with authorized distributors, as supply chain conditions vary. Ensure the SC-59 package footprint matches the target PCB layout before finalizing procurement orders.
Select this component when a single NPN switch with integrated biasing is required. The 10 kOhm input resistance suits standard logic levels. Compare against similar BRTs like the MUN2216T1G if different bias ratios are needed. Verify that the 50V voltage rating and 100mA current capacity meet the specific load requirements of the application circuit.
This part belongs to the MUN2214 series of Bias Resistor Transistors (BRT). It is functionally equivalent to other industry-standard digital transistors such as the DTC114YE. The series is designed to streamline designs by integrating passive biasing elements directly with the active semiconductor device in a compact surface-mount form factor.
Publicly confirmed substitutes include the DTC114YE and MMUN2214L. Verify pinout compatibility and electrical parameters before substitution.
It contains a 10 kOhm series base resistor and a 47 kOhm base-emitter resistor.
The maximum collector-emitter voltage (VCEO) is 50 V.
No, it includes a monolithic bias network, eliminating the need for external resistors.