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Product Detailed Parameters
- Description：TRANS BRT NPN 100MA 50V SC-59
- Series：-
- Mfr：onsemi
- Package：Bulk
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The onsemi MUN2216T1G is a Bias Resistor Transistor (BRT) featuring an NPN silicon transistor integrated with a monolithic bias resistor network. It replaces discrete components to reduce board space and simplify circuit design. The device operates with a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. It includes a series base resistor (R1) of 4.7 kOhms and an open base-emitter resistor (R2). Packaged in the SC-59 surface mount format, it supports wave or reflow soldering. The unit weighs 8 mg and functions within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor.
- Designed for low power surface mount applications using the SC-59 package with modified gull-wing leads to absorb thermal stress during soldering.
- Eliminates individual external resistors to reduce system cost and component count.
Applications
- Level shifting between 12V/24V circuits and logic levels
- Open collector inverter configurations
- Unregulated current source implementations
Procurement Notes
Verify the specific ordering suffix when purchasing. The 'G' suffix indicates a Pb-Free package compliant with RoHS standards. Confirm that the required shipping quantity matches the standard 3000-unit tape and reel configuration provided by the manufacturer.
Selection Notes
Select this component when a high DC current gain of 160 minimum is required alongside a 4.7 kOhm input resistance. Ensure the application utilizes the SC-59 footprint and requires an open base-emitter path rather than a fixed parallel resistor value.
Part Context
This part belongs to the MUN2211T1 Series of NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Networks. The series is categorized as Preferred Devices by onsemi, indicating recommended choices for future use and best overall value within the product line.
Replacement Considerations
MUN2216T1G serves as the Pb-Free replacement for the non-compliant MUN2216T1. Both variants share identical electrical characteristics, marking codes, and pin configurations.
FAQ
What are the internal resistor values for the MUN2216T1G?
The device contains a series base resistor (R1) of 4.7 kOhms and an open base-emitter resistor (R2), indicated by infinity in the datasheet.
How does the SC-59 package handle soldering stress?
The SC-59 package features modified gull-wing leads designed to absorb thermal stress during soldering, eliminating the possibility of damage to the die.
What is the minimum DC current gain specified for this model?
The minimum DC current gain (hFE) for the MUN2216T1G is 160, measured at VCE = 10 V and IC = 5.0 mA.
