MUN2216T1G

MUN2216T1G

$0.16
  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-

SKU:6f0aa3e8b97f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:338 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59

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MUN2216T1G

Overview

The MUN2216T1G is a single NPN Bias Resistor Transistor (BRT) housed in an SC-59 package. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor to replace discrete components. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 Vdc, continuous collector current (IC) of 100 mAdc, and input forward voltage of 30 Vdc. The typical input resistor R1 is 4.7 kOhms with a range of 3.3 to 6.1 kOhms. DC current gain (hFE) has a minimum of 160 at IC = 5.0 mA and VCE = 10 V. Power dissipation is 338 mW at 25°C ambient temperature, operating within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Integrates a single transistor with a monolithic bias network containing a series base resistor and a base-emitter resistor.
  • Designed to replace individual discrete devices and external resistor bias networks.
  • Eliminates the need for separate biasing components to reduce system cost and board space.

Applications

  • Circuit design simplification by reducing component count.
  • Applications requiring reduced board space through integrated biasing.
  • Systems needing replacement of single devices with external resistor bias networks.

Procurement Notes

Verify the specific ordering suffix and marking code against the manufacturer's official documentation before procurement. Confirm that the SC-59 package style matches the required pinout configuration for the target application. Ensure compliance with RoHS and Pb-Free requirements as specified in the product data sheet. Check for any discontinuation notices or recommended new design alternatives if sourcing for long-term production.

Selection Notes

Select this component when a compact NPN digital transistor solution is required with integrated biasing. Verify that the 50 V collector-emitter voltage and 100 mA continuous current ratings meet the circuit demands. Consider the thermal characteristics and power dissipation limits relative to the ambient operating temperature. Ensure the 4.7 kOhm typical base resistor value aligns with the intended drive conditions.

Part Context

The MUN2216T1G belongs to the DTC143T series of digital transistors manufactured by onsemi. This series includes various packages such as SOT-23, SC-70, and SC-75, all sharing the same internal NPN transistor and 4.7 kOhm bias resistor network. The device is part of onsemi's portfolio of Bias Resistor Transistors designed to simplify circuit design and reduce assembly complexity.

Replacement Considerations

Public confirmed substitute part numbers are not explicitly listed in the provided source material. Consult the manufacturer's documentation for potential cross-references or updated design recommendations.

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$0.16
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