ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC59
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：8 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：338 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SC-59
Download product information
Overview
The MUN2231T1G is an NPN Bias Resistor Transistor (BRT) from the MUN2211T1 series, designed to replace a single device and its external resistor bias network. It integrates a monolithic bias network consisting of a 2.2 kOhm series base resistor and a 2.2 kOhm base-emitter resistor into a single SC-59 package. The device supports a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. Total device dissipation is rated at 230 mW on a minimum FR-4 pad and 338 mW on a 1.0 x 1.0 inch pad. The junction temperature range spans from -55°C to +150°C.
Feature Summary
- Integrates a monolithic bias network with two resistors to eliminate individual components
- Reduces board space and component count in circuit designs
- Features modified gull-wing leads that absorb thermal stress during soldering
Applications
- Level shifting between 12 or 24 Volt circuits and logic levels
- Open collector inverter configurations for signal inversion
- Unregulated current source applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm the manufacturer's part number matches the required electrical characteristics before procurement. Ensure the component meets the intended environmental operating conditions. Check for any recent product change notifications that may affect specifications.
Selection Notes
Select this component when a simplified circuit design requiring reduced board space is necessary. Choose based on the integrated 2.2 kOhm resistor values suitable for the specific drive requirements. Consider the SC-59 package dimensions for surface mount layout constraints. Evaluate the thermal dissipation capabilities relative to the expected ambient temperature and PCB copper area.
Part Context
This component belongs to the MUN2211T1 series of NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Networks. The series is designed to simplify circuit design by integrating bias resistors directly with the transistor die. These devices are available in lead-free packages and are classified as preferred devices for future use.
Replacement Considerations
MUN2231T1G
FAQ
What is the configuration of the internal bias network?
The BRT contains a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor.
How does the SC-59 package handle soldering stress?
The modified gull-wing leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
What is the typical DC Current Gain (hFE) for this device?
The minimum DC Current Gain (hFE) is specified as 8.0 at VCE = 10 V and IC = 5.0 mA.
