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The MUN2231T1G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a monolithic bias network consisting of a 2.2 kOhm series base resistor and a base-emitter resistor with a typical ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. It operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 230 mW. Packaged in an SC-59-3 (SOT-23) surface-mount case, it features a minimum DC current gain (hFE) of 8.
Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape/reel specifications. Ensure the requested quantity aligns with standard factory packaging requirements. Confirm RoHS compliance status via the manufacturer's datasheet or environmental declaration before finalizing procurement orders.
Select this component when a single NPN BRT with a 2.2 kOhm input resistance is required. Compare the 230 mW power dissipation limit against thermal constraints. Verify that the SC-59-3 footprint matches the target PCB layout. Consider alternative pinouts if higher current or different resistance values are needed.
This part belongs to the MUN2231 series of Bias Resistor Transistors from onsemi. These devices are designed to simplify circuit design by integrating biasing resistors directly with the transistor die. The series offers various resistance combinations to suit different logic families and drive requirements while maintaining a compact form factor.
NSVMUN2231LT1G: Alternative version in SOT-23-3 package with potentially different power dissipation ratings. Verify electrical parameters and pinout compatibility before substitution.