SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MUN2232T1G is a single NPN Digital Transistor (BRT) manufactured by onsemi, designed to replace discrete transistor and resistor networks. It integrates a monolithic bias network consisting of a 4.7 kOhm series base resistor and a 4.7 kOhm base-emitter resistor within an SC-59-3 package. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and power dissipation of 338 mW. The device operates between -55°C and +150°C with a minimum DC current gain (hFE) of 15.
Verify the specific ordering suffix against the manufacturer's latest datasheet to confirm pinout compatibility and material composition. Ensure the procurement channel provides valid traceability documentation for quality assurance purposes. Confirm that the received components match the specified SC-59-3 package dimensions and marking codes before integration into production lines.
Select this component when a compact NPN switching solution with integrated biasing is required. The 4.7 kOhm internal resistors suit standard logic interface applications. Consider thermal management requirements given the 338 mW power dissipation limit in the small outline package. Verify that the 50 V voltage rating meets the maximum operating conditions of the target circuit.
This part belongs to the MUN2232 series of Bias Resistor Transistors from onsemi. These devices are engineered to streamline the design of digital switching circuits by combining active and passive elements. The series offers various resistor ratios to accommodate different drive requirements while maintaining a consistent footprint for easy PCB layout optimization.
Direct substitutes include the MMUN2232LT1G (tape and reel variant) and other BRTs with identical 4.7k/4.7k resistor ratios and NPN polarity. Verify pinout alignment and thermal characteristics when cross-referencing with competitor equivalents such as those from Rohm or Diodes Inc.