MUN2234T1G

MUN2234T1G

$0.20
  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-

SKU:f1f6b3e2ffd3 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:338 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59

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MUN2234T1G

Overview

The MUN2234T1G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a monolithic bias network consisting of a 22 kOhm series base resistor and a 47 kOhm base-emitter resistor, yielding a typical resistance ratio of 0.47. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. It features a minimum DC current gain (hFE) of 80 and a power dissipation rating of 230 mW. Operating temperatures range from -55°C to +150°C. The component is housed in an SC-59-3 surface-mount package.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias network comprising two resistors to replace discrete components.
  • Simplifies circuit design by eliminating the need for external biasing resistors.
  • Reduces printed circuit board space and overall component count.

Applications

  • General-purpose switching applications
  • Driver circuits for low-power loads
  • Logic level translation interfaces

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and lead times via official onsemi documentation. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the datasheet to maintain device integrity prior to assembly.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required. Verify that the 22 kOhm input resistance matches the driving source impedance. Ensure the 50 V voltage rating exceeds the maximum circuit operating voltage. Confirm that the SC-59-3 package footprint aligns with the target PCB layout constraints.

Part Context

This part belongs to the MUN2234 series of digital transistors. It shares the same electrical characteristics and pinout as the MMUN2234LT1G but utilizes the SC-59-3 package instead of SOT-23-3. The series is designed to simplify biasing networks in bipolar transistor applications.

Replacement Considerations

The MMUN2234LT1G serves as a functional substitute with identical electrical parameters, differing only in the SOT-23-3 package. Cross-reference specific pin assignments and thermal characteristics before implementation.

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