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The MUN2236T1G is an NPN Bias Resistor Transistor (BRT) from the MUN2211T1 series, manufactured by onsemi. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The device is housed in the SC-59 package designed for low power surface mount applications. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a total device dissipation (PD) of 230 mW at 25°C. The typical input resistance (R1) is 100 kOhms with a resistor ratio (R1/R2) of 1. The minimum DC current gain (hFE) is 80.
Verify the specific ordering suffix 'G' indicates a Pb-Free package status as defined in the manufacturer's documentation. Confirm the device marking code corresponds to the correct resistor values for the intended circuit design. Check for any Product Change Notifications (PCN) regarding manufacturing location or material changes before finalizing procurement plans.
Select this component when a simplified circuit design is required for NPN switching applications. Ensure the 50 V collector-emitter voltage rating meets the system requirements. Verify that the 100 mA continuous collector current capability is sufficient for the load. Consider the SC-59 package dimensions for PCB layout constraints.
This part belongs to the MUN2211T1 Series of preferred devices from onsemi. These digital transistors are specifically engineered to simplify circuit design by combining a transistor and bias resistors into a single surface-mount package. The series offers various resistor combinations to suit different logic interface needs.
MUN2236T1G is the Pb-Free version of the MUN2236T1. Both share identical electrical characteristics and pinouts. When replacing, ensure the new component matches the SC-59 package style and the integrated resistor values of 100 kOhms.