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The MUN2236T1G is a single NPN Digital Transistor (BRT) manufactured by onsemi, housed in an SC-59-3 surface-mount package. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a minimum DC current gain (hFE) of 80. The typical input resistance is 100 kOhms with a resistor ratio of 1. Power dissipation is rated at 230 mW, and the device operates within a temperature range of -55°C to +150°C.
Verify end-of-life status before procurement as the component is listed as obsolete. Confirm availability through authorized distributors or secondary markets. Ensure compatibility with existing PCB footprints and soldering processes. Check for alternative automotive-grade versions if reliability standards require AEC-Q101 qualification.
Select this component when a compact NPN solution with integrated biasing is required. Compare with similar BRTs based on voltage ratings, current capacity, and resistor values. Consider the SC-59-3 package constraints for thermal management and board layout. Verify that the 100 kOhm input resistance matches the driving source requirements.
The MUN2236T1G belongs to the MUN2236 series of Bias Resistor Transistors from onsemi. This series is designed to offer a cost-effective and space-saving alternative to discrete transistor and resistor combinations. It is part of onsemi's broader portfolio of digital transistors aimed at simplifying analog and digital interface designs.
Check for NSVMUN2236T1G for automotive-grade requirements. Verify pinout and electrical specifications against other SC-59-3 NPN BRTs from different manufacturers before substitution.