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The MUN2238T1G is a single NPN Digital Transistor (BRT) manufactured by onsemi. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor with a single transistor to replace discrete components. The device operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. It features a minimum DC current gain (hFE) of 80 and a power dissipation rating of 230 mW. The component is housed in an SC-59 package and supports surface mount installation. It functions within a temperature range from -55 °C to +150 °C.
Verify the current lifecycle status before integration, as availability may be restricted. Confirm that the SC-59 package dimensions match the target PCB footprint. Ensure the thermal management strategy accommodates the 230 mW power dissipation limit under worst-case operating conditions. Validate compliance with RoHS standards if required by the final product specifications.
Select this component when a compact NPN solution with integrated biasing is required. Compare the internal resistor values against the specific logic family voltage levels to ensure proper turn-on and turn-off thresholds. Consider the 50 V breakdown voltage relative to the system supply rails. Evaluate the SC-59 package constraints against available layout space.
This part belongs to the MUN2238 series of digital transistors. It shares the same internal schematic and electrical characteristics as the MUN2238LT1G variant, differing primarily in packaging or reel specifications. It serves as a direct functional replacement for other BRTs with identical R1/R2 ratios and NPN polarity within the onsemi portfolio.
The MUN2238LT1G is a confirmed equivalent part number with identical electrical specifications. Verify pinout compatibility and thermal performance when substituting between these variants.