SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MUN2240T1G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor within a single SC-59-3 package. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a typical input resistance of 10 kOhms, a minimum DC current gain (hFE) of 80, and a power dissipation rating of 230 mW. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure the SC-59-3 package dimensions match the target footprint requirements. Validate thermal management capabilities based on the 230 mW dissipation limit in the final assembly.
Select this component when a single NPN switch with integrated biasing is required. Compare the 10 kOhm input resistance against other variants like the MUN2241T1G (100 kOhm) to ensure proper drive current matching. Verify that the 50 V voltage rating exceeds the maximum circuit operating voltage. Check availability as production status may vary.
This part belongs to the MUN2240 series of Bipolar Transistors with built-in bias resistors. It is functionally related to the DTC114EE series. The device is designed to simplify circuit design by eliminating external biasing resistors. It is commonly used in consumer electronics and industrial control systems where space efficiency is critical.
The MUN2240T1G is electrically equivalent to the DTC114EE. Verify pin compatibility before substitution. Other compatible parts in the same family include the MUN2236T1G and MUN2237T1G, though their internal resistor values differ.