MUN2241T1G

Overview

The MUN2241T1G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor within an SC-59-3 package. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a typical input resistance of 100 kOhms, a minimum DC current gain (hFE) of 160, and a power dissipation rating of 230 mW. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates a single NPN transistor with a monolithic bias network comprising a series base resistor and a base-emitter resistor.
• Designed to replace discrete devices and external resistor bias networks, reducing component count and board space.
• Constructed using lead-free, halogen-free, and bromine-free materials compliant with RoHS standards.

Applications

• General-purpose switching applications in consumer electronics.
• Driver circuits for low-current loads requiring simplified biasing.
• Logic interface circuits where board space optimization is critical.

Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes against official onsemi documentation to ensure authenticity. Confirm that the received components match the MUN2241T1G designation and comply with the stated environmental requirements. Cross-reference datasheet revisions to validate parameter consistency before integration into production designs.

Selection Notes

Select this component when a single NPN BRT with approximately 100 kOhm input resistance is required. Ensure the design constraints align with the 50 V collector-emitter voltage limit and 100 mA continuous current capability. Verify that the SC-59-3 package dimensions fit the available footprint and that the thermal dissipation requirements are met within the specified operating temperature range.

Part Context

This part belongs to the MUN2241 series of digital transistors from onsemi. It shares the same package and general topology as other variants in the family but differs in internal resistor values and current gain specifications. It serves as a direct replacement for discrete resistor-transistor combinations in compact circuit designs.

Replacement Considerations

Direct substitutes within the same series include parts with identical pinouts and similar electrical characteristics. Verify compatibility by comparing the built-in bias resistor ratios and hFE minimums against the original design requirements to ensure functional equivalence.