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The MUN5112T1 is a PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SC-70/SOT-323 package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a total device dissipation (PD) of 202 mW at 25°C. The typical input resistance values for R1 and R2 are both 22 kOhms. The junction and storage temperature range spans from -55 to +150 °C.
Verify the specific ordering suffix when purchasing. The 'G' suffix indicates a Pb-Free package compliant with RoHS standards. The 'S' and 'NSV' prefixes denote automotive qualification under AEC-Q101 standards and PPAP capability. Confirm whether the required reel size is 8 mm (standard T1 suffix) or 13 mm (T3 suffix) based on production needs.
Select this component when a PNP digital transistor with integrated biasing is needed to simplify schematic design. Ensure the 50 V collector-emitter voltage rating meets the circuit requirements. Verify that the 22 kOhm internal resistor values provide appropriate base drive for the intended load current. Consider the SC-70 package dimensions if space constraints exist.
This part belongs to the MUN5111T1 Series, which includes various PNP BRT configurations with different resistor ratios. The MUN5112T1 specifically utilizes equal 22 kOhm resistors for both the series base and base-emitter positions. It is distinct from NPN counterparts like the SMUN5112T1 and dual-transistor versions found in larger packages.
Public confirmed substitute part numbers are not provided in the source material.