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The onsemi MUN5113T1 is a PNP Bias Resistor Transistor (BRT) housed in an SC-70/SOT-323 package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. Key electrical parameters include a maximum collector-base voltage (VCBO) of 50 Vdc, a maximum collector-emitter voltage (VCEO) of 50 Vdc, and a continuous collector current (IC) of 100 mAdc. The device features typical input resistors R1 and R2 of 47 kOhms each, resulting in a resistor ratio (R1/R2) of 1.0. Thermal characteristics specify a total device dissipation (PD) of 310 mW at 25°C with a thermal resistance junction-to-ambient (RθJA) of 403 °C/W.
Verify the specific ordering suffix when purchasing. The datasheet lists MUN5113T1G and SMUN5113T1G as standard tape and reel options, while MUN5113T3G indicates a larger reel quantity. Confirm that the required part includes the 'G' suffix for lead-free compliance if specified in your bill of materials. Ensure the package type matches the SC-70/SOT-323 footprint dimensions provided in the documentation.
Select this component when a PNP digital transistor with integrated biasing is required to save board space. The 47 kOhm resistor values are suitable for standard logic interface applications. Consider the 50 V voltage rating and 100 mA current limit for load switching or driver circuits. Verify thermal dissipation requirements against the 310 mW limit at 25°C ambient temperature.
The MUN5113T1 belongs to the MUN5111T1 Series of PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Networks. This series is designed to eliminate individual external biasing components, thereby reducing system cost and board space. The device is manufactured by onsemi (Semiconductor Components Industries, LLC).
MUN5113T3G serves as a reel variant with different packaging quantities. SMUN5113T1G is listed alongside the standard version within the same series documentation.