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The MUN5113T3G is a single PNP digital transistor manufactured by onsemi, belonging to the MUN5113 series. It integrates a monolithic bias resistor network consisting of a series base resistor and a base-emitter resistor with a single PNP silicon transistor. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. It utilizes an SC-74 (SOT-323) surface-mount package. The typical input resistance is 10 kOhms, and the typical resistor ratio is 0.21. The component operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and automotive qualification requirements if applicable to the target application environment. Ensure the supplier provides valid traceability data for the manufacturing lot.
Select this component when a PNP digital transistor with a 50 V rating and 100 mA current capacity is required. The integrated bias network reduces external component count compared to discrete solutions. Verify that the SC-74 package dimensions fit the PCB layout constraints and that the thermal performance meets the system's dissipation requirements under operating conditions.
This part belongs to the MUN5113 series of Bias Resistor Transistors (BRT). These devices are designed to simplify circuit design by integrating bias resistors directly with the transistor die. The series offers various configurations and packages to accommodate different space and electrical requirements in consumer and industrial electronics.
Potential substitutes include other PNP BRTs with similar VCEO and IC ratings, such as the SMUN5113 or NSVMUN5113, provided pin compatibility and electrical parameters match the original design requirements. Verify package equivalence before substitution.