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The MUN5114T1 is a PNP Bias Resistor Transistor (BRT) from onsemi, housed in the SC-70/SOT-323 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor (R1) and a base-emitter resistor (R2). The device features a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. Electrical characteristics include a minimum DC current gain (hFE) of 80 at IC = 5.0 mA and VCE = 10 V. The integrated resistors are typically 10 kOhms for R1 and 47 kOhms for R2, yielding a typical resistor ratio of 0.21. Total device dissipation is rated at 202 mW at 25°C ambient temperature.
Verify the specific ordering suffix against official documentation to confirm packaging details. The standard T1 suffix corresponds to a 3,000-unit tape and reel configuration. Confirm RoHS compliance and Pb-free status through manufacturer declarations. Ensure the SC-70/SOT-323 package dimensions match the target PCB footprint requirements before finalizing procurement.
Select this component when a PNP digital transistor with a 10 kOhm base resistor and 47 kOhm emitter resistor is required. The 50 V collector-emitter voltage rating suits general-purpose switching applications. Verify that the 100 mA continuous current capability meets the load requirements. Consider the thermal resistance and power dissipation limits if operating at elevated ambient temperatures.
The MUN5114T1 belongs to the MUN5111T1 Series of Bias Resistor Transistors. This series includes various configurations with different resistor values to suit diverse circuit needs. All devices in the series share the same SC-70/SOT-323 package and fundamental PNP transistor structure, differing primarily in the integrated resistor network values.
Direct substitutes within the same series include SMUN5114T1G. Other variants like MUN5111T1G or MUN5113T1G offer different resistor ratios and should only be considered if the specific resistance values are not critical to the application design.