MUN5114T1G

Overview

The MUN5114T1G is a single PNP Bias Resistor Transistor (BRT) from onsemi, integrating a transistor with a monolithic bias network in an SC-70/SOT-323 package. It features a typical base resistor (R1) of 10 kΩ and a base-emitter resistor (R2) of 47 kΩ, yielding a ratio of 0.21. The device supports a continuous collector current of 100 mA and withstands a collector-emitter voltage of 50 V. Electrical characteristics include a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, with a maximum saturation voltage of 0.25 V. Thermal dissipation reaches 202 mW at 25°C, operating within a junction temperature range of -55°C to +150°C.

Feature Summary

• Integrates a single PNP transistor with a monolithic bias network consisting of series base and base-emitter resistors to replace discrete components.
• Designed to simplify circuit design by reducing board space and component count while maintaining reliable switching performance.

Applications

• Replacing discrete transistor and resistor bias networks in digital logic circuits.
• Switching applications requiring simplified input drive stages.
• General-purpose signal processing where compact footprint is required.

Procurement Notes

Verify the specific ordering suffix and marking code against the manufacturer's official documentation to ensure correct package type and shipping configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the datasheet.

Selection Notes

Select this component when a PNP digital transistor with a 10 kΩ base resistor and 47 kΩ emitter resistor is required. Verify that the SC-70/SOT-323 package dimensions fit the PCB layout constraints. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that the thermal dissipation requirements are met within the operating temperature range.

Part Context

This part belongs to the MUN5114 series of digital transistors manufactured by onsemi. It shares electrical characteristics with other variants in the DTA114Y family but differs in packaging and specific resistor values. The series is designed for applications requiring integrated biasing solutions to streamline assembly and reduce passive component usage.

Replacement Considerations

SMUN5114T1G

FAQ

What are the internal resistor values for the MUN5114T1G?

The device contains a series base resistor (R1) with a typical value of 10 kΩ and a base-emitter resistor (R2) with a typical value of 47 kΩ.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 50 Vdc.

What is the minimum DC current gain (hFE) specification?

The minimum DC current gain (hFE) is 80, measured at a collector current of 5.0 mA and a collector-emitter voltage of 10 V.