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The onsemi MUN5115T1 is a PNP Bias Resistor Transistor (BRT) housed in the SC-70/SOT-323 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor and an open base-emitter path. Key electrical parameters include a maximum collector current of 100 mA, collector-base voltage of 50 Vdc, and collector-emitter voltage of 50 Vdc. The device features a minimum DC current gain of 160 at 5 mA and 10 V, with a typical input resistance of 10 kOhms. Thermal characteristics specify a total power dissipation of 202 mW at 25°C ambient temperature.
Verify the specific ordering suffix when purchasing. The provided datasheet lists MUN5115T1G as the primary part number, indicating lead-free compliance. Confirm whether the 'G' suffix is required for your supply chain specifications. Ensure the package type matches the SC-70/SOT-323 footprint requirements for your PCB design.
Select this component when a PNP digital transistor with a 10 kOhm base resistor is needed. Verify that the 50 V collector-emitter voltage rating meets the circuit requirements. Consider the 202 mW power dissipation limit at 25°C for thermal management. Check if the integrated bias network configuration suits the specific logic interface needs.
This component belongs to the MUN5111T1 Series of Bias Resistor Transistors from onsemi. The series includes various PNP devices with different internal resistor values. The MUN5115T1 specifically features a 10 kOhm series base resistor with no base-emitter resistor. These devices are designed to simplify circuit design by integrating the bias network directly onto the silicon die.
Check for MUN5115T1G as the lead-free equivalent. Other series members like MUN5114T1 or MUN5116T1 offer different resistor ratios but share the same package and general electrical ratings.