MUN5115T1G

Overview

The MUN5115T1G is a single PNP digital transistor from onsemi, featuring an integrated base resistor. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes a 10 kOhm base resistor (R1) and exhibits a minimum DC current gain (hFE) of 160 at 5 mA and 10 V. The saturation voltage is 250 mV maximum at 300 µA base current and 10 mA collector current. Power dissipation is rated at 202 mW, with a collector cutoff current of 500 nA maximum. It is housed in the SC-70-3 (SOT-323) surface-mount package.

Feature Summary

• Integrates a single PNP bipolar junction transistor with a built-in 10 kOhm base bias resistor to simplify circuit design.
• Provides high current gain characteristics suitable for switching applications requiring reliable signal amplification.
• Designed for surface-mount assembly in compact SC-70-3 packages to support space-constrained layouts.

Applications

• General-purpose switching circuits replacing discrete transistor and resistor networks
• Driver stages for low-power loads in consumer electronics
• Logic level translation interfaces in embedded systems

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the received parts match the MUN5115T1G designation and SC-70-3 packaging specifications. Check for AEC-Q100 qualification documentation if automotive compliance is required. Ensure storage conditions adhere to moisture sensitivity level 1 guidelines to prevent package damage during soldering processes.

Selection Notes

Select this component when a single PNP configuration with a fixed 10 kOhm base resistance is required. Compare against alternative series such as MUN5114 or MUN5116 if different resistor values or NPN polarity are needed. Evaluate thermal performance based on the 202 mW power dissipation limit within the target enclosure environment. Verify compatibility with existing PCB footprints designed for SOT-323 packages.

Part Context

This part belongs to the MUN5115 series of pre-biased transistors manufactured by onsemi. It serves as a compact alternative to discrete BJT and resistor combinations. The series is commonly used in portable devices and industrial controls where board space is limited. Related components include the dual-transistor variants like SMUN5115DW1T1G for differential applications.

Replacement Considerations

Direct substitutes include other single PNP digital transistors with identical 10 kOhm base resistors and 50 V ratings. Verify pinout compatibility for SC-70-3 packages before substitution. Cross-reference datasheets for hFE and Vce(sat) tolerances to ensure functional equivalence in critical timing or gain-sensitive circuits.