SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MUN5116T1 is a PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SC-70/SOT-323 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor and an open base-emitter connection. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a total device dissipation (PD) of 202 mW at 25°C. The typical input resistance (R1) is 4.7 kOhms. The DC current gain (hFE) has a minimum value of 160 at IC = 5.0 mA and VCE = 10 V. The junction temperature range spans from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's documentation to confirm shipping format and compliance status. The standard T1 suffix indicates a 3,000-unit reel in 8 mm embossed tape. Confirm RoHS and Pb-Free status through official datasheets or product change notices, as manufacturing processes may evolve. Ensure the source document matches the exact part number to avoid discrepancies in electrical characteristics or packaging specifications.
Select this component when a PNP digital transistor with a 4.7 kOhm base resistor is required. Verify that the 50 V collector-emitter voltage and 100 mA current ratings meet the application requirements. Consider the SC-70/SOT-323 package dimensions for PCB layout constraints. Compare the hFE minimum of 160 against load conditions to ensure adequate saturation. Check thermal derating curves if operating above 25°C ambient temperature.
This device belongs to the MUN5111T1 Series, which includes various PNP BRT configurations with different resistor values. The series is designed to simplify biasing networks in surface mount electronics. Other members of the family feature different R1/R2 ratios or resistor values, such as the MUN5111T1 with 10 kOhm resistors. The MUN5116T1 specifically utilizes a 4.7 kOhm series base resistor with no base-emitter resistor.
MUN5116DW1T1G is listed as a direct replacement option.