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The MUN5116T1G is a single PNP digital transistor from the onsemi MUN5116 series, housed in an SC-70-3 package. It integrates a bias resistor network to replace discrete components. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 4.7 kOhms and a minimum DC current gain (hFE) of 160. Power dissipation is rated at 338 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify the specific ordering suffix and package variant against the manufacturer's latest datasheet before procurement. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability may vary by region. Ensure the component meets the required thermal and electrical specifications for the target application environment.
Select this component when a single PNP digital transistor with a 4.7 kOhm base resistor is required. Compare the 50 V voltage rating and 100 mA current capacity against circuit demands. Consider the SC-70-3 package size for board space constraints. Verify that the hFE minimum of 160 meets the drive requirements of the load.
This part belongs to the MUN5116 series of digital transistors manufactured by onsemi. It is functionally related to other variants in the series that may differ in resistor values or polarity. The MUN5116T1G specifically denotes the single PNP configuration with a 4.7 kOhm input resistor in the SC-70-3 package.
The MUN5116DW1T1G is listed as a direct replacement option for the MUN5116T1G. Verify pinout compatibility and electrical specifications before substitution.