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The MUN5130T1G is a single Bias Resistor Transistor (BRT) manufactured by onsemi, featuring an integrated PNP bipolar junction transistor and monolithic bias resistor network. It operates with a maximum collector-emitter voltage of 50 V and supports a continuous collector current of 100 mA. The device incorporates a typical base resistor of 1 kOhm and an emitter resistor of 1 kOhm, maintaining a resistance ratio of 1. Packaged in the SC-59 (SOT-23) surface-mount format, it offers a power dissipation rating of 230 mW and functions reliably within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check moisture sensitivity levels prior to assembly. Confirm that the SC-59 footprint matches the target PCB design requirements.
Select this component when a compact PNP solution with built-in biasing is required. Compare the 1 kOhm resistor values against external drive capabilities to ensure adequate base current. Evaluate thermal performance based on the 230 mW dissipation limit in the intended enclosure environment.
This part belongs to the MUN5130 series of dual bias resistor transistors from onsemi. These devices are engineered to consolidate multiple discrete elements into a single surface-mount package, streamlining manufacturing processes and improving reliability in space-constrained electronic designs.
Direct substitutes include other PNP BRTs with matching 50V ratings and 1k/1k resistor networks in SC-59 packages, such as the DTA113EE or MUN2130T1G, provided pinouts and electrical characteristics align with the original design constraints.