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The onsemi MUN5131T1 is a PNP silicon Bias Resistor Transistor (BRT) housed in an SC-70/SOT-323 package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). Both resistors are nominally 2.2 kΩ. The device features a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. Thermal characteristics include a total device dissipation of 202 mW at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 618 °C/W.
Verify the specific ordering suffix when purchasing. The datasheet indicates that replacing the 'T1' suffix with 'T3' changes the shipping quantity from a 3,000-unit reel to a 10,000-unit reel. Ensure the required packaging format matches the intended manufacturing process before placing orders.
Select the MUN5131T1 when a PNP digital transistor with 2.2 kΩ series and base-emitter resistors is required. Confirm that the 50 V collector-emitter voltage and 100 mA collector current ratings meet the circuit requirements. Consider the SC-70 package dimensions if space constraints are a primary design factor.
The MUN5131T1 belongs to the MUN5111T1 Series of Bias Resistor Transistors from onsemi. This series includes various PNP devices with different internal resistor values, all sharing the same SC-70/SOT-323 package and general electrical characteristics. The series is designed to simplify circuit design by integrating bias resistors directly with the transistor die.
Public confirmed substitute part numbers are not available in the provided documentation.