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Product Detailed Parameters
- Description：TRANS BRT PNP 100MA 50V SOT-323
- Series：-
- Mfr：onsemi
- Package：Bulk
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：310 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70-3 (SOT323)
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Overview
The MUN5132T1 is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of two resistors. It operates within a collector-emitter voltage range of 50 Vdc and supports a continuous collector current of 100 mAdc. The device features a DC current gain (hFE) minimum of 15 at IC = 5.0 mA and VCE = 10 V. Internal resistor values are R1 = 4.7 kΩ and R2 = 4.7 kΩ. Total device dissipation is rated at 202 mW at 25°C ambient temperature. The component is housed in an SC-70/SOT-323 package.
Feature Summary
- Integrates a single PNP transistor with a monolithic bias network containing series base and base-emitter resistors to replace discrete components.
- Designed for low power surface mount applications using the SC-70/SOT-323 package.
- Available in Pb-Free, Halogen Free/BFR Free, and RoHS Compliant configurations.
Applications
- Circuit design simplification by reducing board space and component count.
- Low power surface mount applications requiring integrated biasing.
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm shipping quantities and packaging types. Confirm that the requested part number matches the exact electrical characteristics and resistor values required for the application circuit. Ensure compliance with environmental standards such as RoHS if applicable to the project requirements.
Selection Notes
Select this component when a PNP digital transistor with 4.7 kΩ internal bias resistors is required. Verify that the 50 V collector-emitter voltage rating and 100 mA current capacity meet the system specifications. Consider the thermal dissipation limits and operating temperature range of -55°C to +150°C during selection.
Part Context
This component belongs to the MUN51xxT1 series of Bias Resistor Transistors manufactured by onsemi. The series includes various PNP devices with different internal resistor combinations, all sharing the same SC-70/SOT-323 package form factor and general electrical characteristics.
Replacement Considerations
SMUN5132T1G
FAQ
What are the internal resistor values for the MUN5132T1?
The internal bias network consists of a series base resistor (R1) of 4.7 kΩ and a base-emitter resistor (R2) of 4.7 kΩ.
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
What package type does the MUN5132T1 use?
The device is housed in the SC-70/SOT-323 package, also referred to as Case 419.
