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The MUN5133T1G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It replaces discrete components to reduce board space and system cost. The device features a collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. Typical internal resistors are R1 = 4.7 kOhms and R2 = 47 kOhms. It operates within a junction temperature range of -55°C to +150°C and is housed in an SC-70/SOT-323 package.
Verify the specific ordering suffix when purchasing. The 'G' suffix indicates a Pb-Free package. Standard reels contain 3,000 units. For larger quantities, replace 'T1' with 'T3' in the device number to order a 13-inch/10,000 unit reel. Confirm RoHS compliance and halogen-free status as required by project specifications.
Select this component based on the required PNP polarity and 50 Vdc maximum ratings. Ensure the typical input resistance values (R1=4.7k, R2=47k) match the circuit design needs. Verify thermal dissipation requirements against the ambient temperature conditions, noting the derating curve above 25°C. Consider the SC-70/SOT-323 package dimensions for PCB layout constraints.
This part belongs to the MUN51xxT1 Series of PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Networks. The series includes various configurations with different resistor ratios and values, all sharing the same SC-70/SOT-323 package and general electrical characteristics suitable for digital switching applications.
Public confirmed substitute part numbers: SMUN5133T1G, NSVMUN5133T1G.