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The MUN5136T1 is a PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SC-70/SOT-323 package. It integrates a single PNP transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). The device features a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. Electrical characteristics include a minimum DC current gain (hFE) of 80 at IC = 5.0 mA and VCE = 10 V. The integrated resistors are specified as R1 = 100 kOhms and R2 = 100 kOhms. Total device dissipation is rated at 202 mW at 25°C ambient temperature.
Verify the specific ordering suffix when purchasing. The provided datasheet lists the MUN5136T1G variant for tape and reel shipping. Confirm that the 'G' suffix denotes the lead-free and RoHS-compliant status required for your assembly process. Ensure the package type matches the SC-70/SOT-323 footprint specifications before procurement.
Select this component for applications requiring a PNP digital transistor with high input resistance. The 100 kOhm internal resistors suit interfaces needing minimal base drive current. Verify that the 50 V collector-emitter voltage rating meets the circuit's maximum operating voltage requirements. Consider the thermal derating curve if operating above 25°C ambient temperature.
This part belongs to the MUN5111T1 Series of Bias Resistor Transistors manufactured by onsemi. The series includes various PNP BRTs with different resistor ratios and values, all sharing the same SC-70/SOT-323 package and general electrical characteristics. The MUN5136T1 is distinguished by its specific 100 kOhm/100 kOhm resistor configuration.
Public confirmed substitute part numbers are not available in the provided documentation. Check for variants within the same series, such as MUN5136T1G, which shares identical electrical parameters but may differ in packaging or compliance suffixes.