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The MUN5136T1G is a Bias Resistor Transistor (BRT) featuring a single PNP transistor integrated with a monolithic bias network comprising two resistors. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device utilizes an SC-70/SOT-323 package, providing a typical input resistance of 100 kOhms with a resistor ratio of 1.0. Thermal characteristics include a total device dissipation of 202 mW at 25°C and a junction-to-ambient thermal resistance of 618 °C/W on FR-4 minimum pad configurations.
Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the selected variant meets environmental requirements such as halogen-free specifications before finalizing procurement orders.
Select this component when a compact solution for PNP switching is required without external bias resistors. Verify that the 50 V collector-emitter voltage rating aligns with the system supply rails. Consider the SC-70/SOT-323 package dimensions for PCB layout constraints and ensure thermal dissipation limits are respected under maximum operating conditions.
This part belongs to the MUN5136 series of digital transistors manufactured by onsemi. It shares electrical characteristics with related parts like DTA115E but differs in packaging. The series is designed to simplify analog and digital interface circuits by integrating biasing elements directly into the transistor package.
Direct functional replacements include DTA115EE and DTA115EM3, which share identical electrical parameters but utilize different packages such as SC-75 and SOT-723 respectively. Cross-package substitution requires verification of pinout compatibility and physical footprint constraints.