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The onsemi MUN5137T1 is a PNP Bias Resistor Transistor (BRT) housed in an SC-70/SOT-323 surface-mount package. It integrates a single PNP silicon transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. The device features a maximum collector-emitter voltage of 50 Vdc, a continuous collector current of 100 mAdc, and a total power dissipation of 202 mW at 25°C. Electrical characteristics include a typical DC current gain of 80 at 5 mA and 10 V, and a typical input resistance ratio of 2.1.
Verify the specific ordering suffix when purchasing. The 'T1' suffix indicates a 7-inch tape and reel containing 3,000 units. Confirm that the required quantity aligns with this standard shipping configuration or check for alternative suffixes if different packaging is needed. Ensure the part number matches the exact resistor values specified in the datasheet table.
Select the MUN5137T1 when a PNP digital transistor with a specific internal resistor ratio is required. The integrated network simplifies circuit design by eliminating external bias resistors. Verify that the 50 V collector-emitter voltage rating and 100 mA current capacity meet the application requirements. Consider the thermal dissipation limits based on the ambient temperature and PCB pad size.
This component belongs to the MUN51xxT1 Series of PNP Bias Resistor Transistors from onsemi. The series offers various combinations of internal resistors to suit different logic levels and drive requirements. All devices in this family share the same SC-70/SOT-323 package and basic electrical ratings, differing primarily in their internal R1 and R2 resistor values.
Direct substitutes within the same series include other MUN51xxT1G variants with different resistor ratios. Cross-manufacturer equivalents should be verified for matching pinout, voltage ratings, and current capabilities.