MUN5137T1G

Overview

The MUN5137T1G is a single PNP Bipolar Resistor-Transistor (BRT) digital transistor manufactured by onsemi. It integrates an NPN biasing resistor and a PNP output transistor within a compact SOT-323 (SC-70-3) surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current rating of 100 mA. Key electrical specifications include a typical input resistance of 47 kOhms, a minimum DC current gain (hFE) of 80, and a power dissipation capability of 310 mW. The component operates reliably across a temperature range from -55°C to +150°C.

Feature Summary

• Integrates a PNP transistor with an internal NPN biasing network to simplify circuit design.
• Provides high current gain with a minimum hFE of 80 for reliable switching performance.
• Utilizes a compact SC-70-3 (SOT-323) surface-mount package for space-constrained applications.

Applications

• General-purpose switching circuits
• Logic level translation interfaces
• Driver stages for low-power loads

Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the SC-70-3 footprint matches the target PCB layout requirements. Ensure compliance with RoHS directives if required by the end-product standards. Cross-reference the datasheet revision date to confirm the accuracy of thermal and electrical parameters before finalizing the bill of materials.

Selection Notes

Select this component when a single PNP switching element with integrated base biasing is required. The 47 kOhm input resistance offers a standard balance between drive current requirements and noise immunity. Consider the 50 V voltage rating and 100 mA current limit to ensure adequate headroom for the intended load. The wide operating temperature range supports use in industrial or automotive environments where thermal stability is critical.

Part Context

This part belongs to the MUN5137 series of digital transistors, which are designed to replace discrete resistor-transistor networks. The series includes complementary NPN variants such as the MUN5237T1G. These devices streamline board space and assembly time by combining active and passive components into a single semiconductor package.

Replacement Considerations

Direct substitutes may include other single PNP BRTs with similar 50V/100A ratings and SC-70-3 packages, provided the internal resistor ratios match the application's biasing needs.