MUN5141T1G

Overview

The MUN5141T1G is a single PNP digital transistor manufactured by onsemi, housed in an SC-70/SOT-323 surface-mount package. It features a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 100 mA. The device integrates internal biasing resistors with a typical input resistance of 10 kOhms and a resistor ratio of 0.21. Power dissipation is rated at 310 mW, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

• Integrates a single PNP bipolar junction transistor with built-in biasing network for simplified circuit design
• Optimized for high-speed switching applications through pre-biased configuration
• Designed for surface-mount assembly within compact SC-70/SOT-323 packages

Applications

• General-purpose digital switching circuits
• Logic level translation interfaces
• Driver stages for low-power loads

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the received parts match the specified SC-70/SOT-323 marking codes. Ensure storage conditions comply with moisture sensitivity levels to prevent package degradation prior to soldering.

Selection Notes

Select this component when a compact PNP digital switch is required with a 50V voltage rating. The integrated biasing network reduces external component count compared to discrete BJT solutions. Verify that the 100mA current limit meets the specific load requirements of the target application.

Part Context

This part belongs to the MUN5141 series of pre-biased transistors. It serves as a specialized variant within onsemi's portfolio of digital transistors, designed to replace multiple discrete components in logic and interface circuits while maintaining consistent electrical characteristics across production batches.

Replacement Considerations

MUN2141T1G