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The onsemi MUN5211T1G is a single NPN Bias Resistor Transistor (BRT) housed in an SOT-323 (SC-70) surface-mount package. It integrates a monolithic bias network consisting of a 10 kΩ series base resistor and a 10 kΩ base-emitter resistor with the transistor. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (PD) of 202 mW at 25°C ambient temperature. The device operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix 'T1G' to confirm the tape-and-reel packaging format and lead-free compliance status. Ensure the ordering part number matches the required resistance values and package type exactly. Cross-reference the manufacturer's latest datasheet for any updates regarding environmental compliance or pinout configurations before finalizing procurement.
Select this component when a compact NPN solution with integrated biasing is required. The 10 kΩ/10 kΩ resistor ratio suits standard logic interface applications. Compare against other MUN52xx variants if different resistance ratios or PNP polarity are needed. Verify thermal constraints for high-density PCB layouts due to the small SC-70 footprint.
This component belongs to the MUN5211 series of digital transistors from onsemi. These devices are designed to simplify analog and digital circuit designs by combining a transistor and bias resistors into one package. The series offers various resistance combinations and packages to accommodate different design constraints.
Compatible substitutes include the MUN5211DW1T1G (dual version in SOT-363) or other NPN BRTs with identical 10k/10k resistor ratios and 50V/100mA ratings. Verify pin compatibility and thermal characteristics when substituting.