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The onsemi MUN5212T1 is an NPN Silicon Bias Resistor Transistor (BRT) housed in a SC-70/SOT-323 package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). The device features a maximum collector current of 100 mA, a collector-emitter voltage of 50 V, and a total power dissipation of 310 mW at 25°C. Typical internal resistance values are 22 kΩ for both R1 and R2.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the device code marking matches the datasheet specifications for the MUN5212T1 variant. Ensure compliance with RoHS requirements if applicable to the specific order code.
Select this component when a compact NPN switching solution with integrated biasing is required. Verify that the 22 kΩ typical input resistance aligns with the drive circuit requirements. Ensure the 50 V collector-emitter voltage rating exceeds the maximum operating voltage of the target application.
This part belongs to the MUN5211T1 Series of preferred devices from onsemi. The series includes various BRT configurations with different resistor ratios and values, all sharing the same SC-70/SOT-323 footprint and general electrical characteristics.
MUN5212T1G is the lead-free version of this component within the same series.