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The onsemi MUN5213T1 is an NPN Silicon Bias Resistor Transistor (BRT) housed in the SC-70/SOT-323 package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The device features a maximum collector current of 100 mAdc, a collector-base voltage of 50 Vdc, and a collector-emitter voltage of 50 Vdc. Total device dissipation is rated at 202 mW at 25°C ambient temperature. The internal resistors are both 47 kOhms, providing a typical input resistance of 47 kOhms.
Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance. Confirm that the requested part number matches the exact electrical characteristics required for the design. Ensure compatibility with standard wave or reflow soldering processes specified for the SC-70/SOT-323 package.
Select this component when a compact NPN digital transistor solution is needed with a 47 kOhm base-to-base and base-to-emitter resistor configuration. Verify that the 50 Vdc voltage rating and 100 mA current capacity meet the circuit requirements. Consider the thermal dissipation limits relative to the expected operating ambient temperature.
This device belongs to the MUN5211T1 Series of preferred devices from onsemi. The series includes various BRT configurations with different resistor values to suit diverse circuit needs while maintaining the same physical footprint and general electrical ratings.
MUN5213T1G serves as the lead-free equivalent within the same series.