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The onsemi MUN5213T1G is an NPN Bias Resistor Transistor (BRT) housed in a SC-70/SOT-323 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. Key electrical parameters include a maximum collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and total device dissipation of 202 mW at 25°C. The typical input resistance R1 is 47 kΩ with a resistor ratio of 1.0. DC current gain is specified as 80 minimum at 5.0 mA collector current.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping quantity. Ensure the part marking matches the datasheet specifications for the MUN5213 series. Confirm RoHS compliance status if required for the specific application environment. Check for any discontinued status or alternative recommendations from the supplier.
Select this component when a compact NPN switch with integrated biasing is required. The SC-70 package suits space-constrained designs. Verify that the 50V voltage rating and 100mA current capacity meet the load requirements. Consider the thermal derating characteristics if operating above ambient temperatures. Compare with other BRT variants if different resistor values are needed.
The MUN5213T1G belongs to the DTC144E/D digital transistor family from onsemi. This series includes various packages such as SOT-23, SC-59, and SOT-723. The device is designed to simplify bias networks in digital circuits. It is part of a broader range of pre-biased transistors offering different configurations and resistor ratios for diverse application needs.
Direct replacements within the same family include SMUN5213T1G. Other packages in the DTC144E series like MMUN2213LT1G (SOT-23) may be suitable if form factor changes are acceptable. Verify pinout compatibility and electrical parameters before substitution.