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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SC70-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：202 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70-3 (SOT323)
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Overview
The onsemi MUN5214T1 is an NPN Silicon Bias Resistor Transistor (BRT) housed in the SC-70/SOT-323 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor (R1 = 10 kΩ) and a base-emitter resistor (R2 = 47 kΩ). The device supports a maximum collector current of 100 mA and withstands collector-base and collector-emitter voltages up to 50 Vdc. Thermal dissipation reaches 202 mW at 25°C ambient temperature, with an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network containing two resistors to replace individual components.
- Designed for low power surface mount applications where board space is limited.
- SC-70/SOT-323 package features modified gull-winged leads to absorb thermal stress during wave or reflow soldering.
Applications
- Level shifting between 12V/24V circuits and logic levels
- Open collector inverter configurations
- Unregulated current source implementations
Procurement Notes
Verify component authenticity by checking the marking code '8D' against official documentation. Confirm the presence of Pb-Free packaging if required by assembly specifications. Ensure ordering suffixes match the specific reel configuration needed for production lines.
Selection Notes
Select this model when a 10k series base resistor and 47k emitter resistor are required for biasing. Verify that the 100mA collector current rating meets the load requirements. Consider the SOT-323 footprint constraints during PCB layout planning.
Part Context
This component belongs to the MUN5211T1 Series of preferred devices manufactured by onsemi. The series includes various BRT configurations with different resistor ratios, all sharing the same SC-70/SOT-323 package and core transistor characteristics.
Replacement Considerations
MUN5214T1G serves as the lead-free equivalent variant within the same series. Cross-referencing with other manufacturers requires matching the 10k/47k resistor ratio and NPN polarity in the SOT-323 package.
FAQ
What is the internal resistor configuration for the MUN5214T1?
The device contains a series base resistor (R1) of 10 kΩ and a base-emitter resistor (R2) of 47 kΩ.
How does the BRT simplify circuit design compared to discrete components?
It eliminates the need for external bias resistors by integrating them into a single monolithic device, reducing component count and board space.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at 50 Vdc.
