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The MUN5214T1G is a dual NPN Bias Resistor Transistor (BRT) manufactured by onsemi, housed in a SOT-363 (SC-88) surface-mount package. It integrates two independent NPN transistors with monolithic bias resistor networks, each comprising a series base resistor and a base-emitter resistor. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation of 256 mW. The typical input resistance is 10 kOhms with a resistor ratio of 0.21. The device operates within a temperature range of -55°C to +150°C.
Verify the specific suffix against official documentation, as ordering codes may indicate variations in tape-and-reel specifications or manufacturing origin without altering the core electrical function. Confirm RoHS compliance status directly from the manufacturer's declaration for the specific production batch. Ensure the supplier provides valid traceability data matching the onsemi part number MUN5214T1G.
Select this component when a dual NPN configuration with integrated biasing is required in a small footprint. The 10 kOhm base resistor value suits standard logic levels. Compare thermal dissipation ratings against the application's ambient conditions. Verify that the 50 V breakdown voltage meets the circuit's maximum operating voltage requirements.
This part belongs to the MUN5214 series of digital transistors designed by onsemi. It is functionally related to other BRT devices like the MUN5211DW1T1 but differs in internal resistor values and package configuration. The SOT-363 package allows for high-density mounting compared to single-transistor packages.
Publicly confirmed substitute part numbers are not available in the provided source material.